MRAM

MRAM (Magneto resistive Random Access Memories) is the next generation memory and called "the ideal memory”
Density and cost of DRAM. Speed of SRAM and Non-volatility of a disk or flash memory. To further improve the functionality and characteristics of the magnetic and semi-conducting materials, Spintronix has developed the design for a spin filter (magnetic tunnel barrier) device structure, which could be used as a cellular element in a MRAM circuit. The filter has two clearly separated energy levels for spin up respectively spin down electrons. The energy gap can be tuned to clearly discriminate between the two states. There are several benefits, such as:

* Very low energy dissipation.
* Virtually Zero level cross-talk between memory cells because very small magnetic fields are needed.
* Because of low cross-talk the device structure allows for high-density designs and production, which in turn speeds operation time.
* Unique MRAM solutions in true Spintronic materials
* Simple design and production due to magnetic tunnel barriers
* Several high temperature Spintronic materials for your applications
* Efficient and stable production, of Spintronics, with standard equipment

Basic concept of M-RAM cells



http://en.wikipedia.org/wiki/MRAM